380mW SOT363 BC 847 bpdw 1T1G Compl Transistor NPN/PNP Bipolar 45/-45 V 0,1/ 0,1A, Gehäuse: SOT363, Verlustleistung: 380mW, Kollektor-Emitter-Spannung: 45/-45V, Transistor-Typ: NPN / PNP, Polarisierung: bipolar,Product Authenticity Guarantee,FREE gifts & price promise,New goods listing,High Quality with affordable prices! 0,1/ 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor NPN/PNP Bipolar 45/-45 V, NPN/PNP Bipolar 45/-45 V 0,1/ 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor.

NPN/PNP Bipolar 45/-45 V 0,1/ 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor

NPN//PNP Bipolar 45//-45 V 0,1// 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor
NPN//PNP Bipolar 45//-45 V 0,1// 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor
NPN//PNP Bipolar 45//-45 V 0,1// 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor
NPN//PNP Bipolar 45//-45 V 0,1// 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor
NPN//PNP Bipolar 45//-45 V 0,1// 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor
NPN//PNP Bipolar 45//-45 V 0,1// 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor

Verlustleistung: 380mW, See all condition definitions : Herstellernummer: : TME_BC847BPDW1T1G, Transistor-Typ: NPN / PNP, Polarisierung: bipolar, 1/- 0, Packaging should be the same as what is found in a retail store. unused, Kollektor-Emitter-Spannung: 45/-45V, Gehäuse: SOT363, Marke: : unbekannt, undamaged item in its original packaging. See the seller's listing for full details, unopened, where packaging is applicable, 1A 380mW SOT363 BC 847 bpdw 1T1G Compl. unless the item was packaged by the manufacturer in non-retail packaging. Condition:: New: A brand-new, such as an unprinted box or plastic bag. Transistor: NPN/PNP Bipolar 45/-45 V 0.

NPN/PNP Bipolar 45/-45 V 0,1/ 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor

NPN//PNP Bipolar 45//-45 V 0,1// 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor

NPN/PNP Bipolar 45/-45 V 0,1/ 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor

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NPN/PNP Bipolar 45/-45 V 0,1/ 0,1A 380mW SOT363 BC 847 bpdw 1T1G Compl Transistor


yanagawa-cci.or.jp Gehäuse: SOT363, Verlustleistung: 380mW, Kollektor-Emitter-Spannung: 45/-45V, Transistor-Typ: NPN / PNP, Polarisierung: bipolar,Product Authenticity Guarantee,FREE gifts & price promise,New goods listing,High Quality with affordable prices!