K10A60W TK10A60W TO-220F 600V 9.7A N-Channel DTMOS FET new stock –ref:728, N Channel DTMOS FET, TO-220F 600V 9,7A, (1) Low drain-source on-resistance: R DS(ON) = 0,327 Ω (typ,), by used to Super Junction Structure : DTMOS,K10A60W TK10A60W,BEST Price Guaranteed,Upgrade does not raise price,The best prices, free shipping and no sales tax. stock –ref:728 K10A60W TK10A60W TO-220F 600V 9.7A N-Channel DTMOS FET new, N-Channel DTMOS FET new stock –ref:728 K10A60W TK10A60W TO-220F 600V 9.7A.

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N-Channel DTMOS FET new stock  –ref:728 K10A60W TK10A60W TO-220F 600V 9.7A
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ON, unopened, by used to Super Junction Structure : DTMOS, Condition:: New: A brand-new, 327 Ω, MPN: : Does Not Apply, N Channel DTMOS FET, typ, N-Channel DTMOS FET new stock –ref:728, such as an unprinted box or plastic bag, unused, 1, Low drain-source on-resistance: R DS, = 0, Type: : MOSFET: Model: : K10A60W, 7A, where packaging is applicable, unless the item was packaged by the manufacturer in non-retail packaging, See the seller's listing for full details, undamaged item in its original packaging. K10A60W TK10A60W, K10A60W TK10A60W TO-220F 600V 9. Packaging should be the same as what is found in a retail store, 7A, See all condition definitions : Brand: : Toshiba. TO-220F 600V 9.

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N-Channel DTMOS FET new stock –ref:728 K10A60W TK10A60W TO-220F 600V 9.7A


yanagawa-cci.or.jp N Channel DTMOS FET, TO-220F 600V 9,7A, (1) Low drain-source on-resistance: R DS(ON) = 0,327 Ω (typ,), by used to Super Junction Structure : DTMOS,K10A60W TK10A60W,BEST Price Guaranteed,Upgrade does not raise price,The best prices, free shipping and no sales tax.